Hard magnet with cap and seed layers and data storage device read/write head incorporating the same
    1.
    发明授权
    Hard magnet with cap and seed layers and data storage device read/write head incorporating the same 有权
    具有盖子和种子层的硬磁体和包含其的数据存储装置读/写头

    公开(公告)号:US08932667B2

    公开(公告)日:2015-01-13

    申请号:US12112671

    申请日:2008-04-30

    摘要: A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer. The intermediate layer includes the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The first component is different than the second component. Additionally, a read/write head including the hard magnet.

    摘要翻译: 一种包括形成多层结构的方法。 多层结构包括种子层,其包含选自由Pt族金属,Fe,Mn,Ir和Co组成的组的第一组分。多层结构还包括包含第一组分和第二组分的中间层,所述第二组分选自 由Pt族金属,Fe,Mn,Ir,Co组成的第二成分与第一成分不同。 多层结构还包括包含第一部件的盖层。 该方法还包括将多层结构加热至退火温度以引起中间层的相变。 还有一种包括种子层的硬磁体,其包含选自由Pt族金属,Fe,Mn,Ir和Co组成的组的第一组分。硬磁体还包括包含第一组分的盖层。 硬磁体还包括种子层和盖层之间的中间层。 中间层包括第一组分和选自Pt族金属,Fe,Mn,Ir和Co的第二组分。第一组分不同于第二组分。 另外,包括硬磁体的读/写头。

    Partial Magnetic Biasing of Magnetoresistive Sensor
    2.
    发明申请
    Partial Magnetic Biasing of Magnetoresistive Sensor 有权
    磁阻传感器的部分磁偏置

    公开(公告)号:US20130027032A1

    公开(公告)日:2013-01-31

    申请号:US13194828

    申请日:2011-07-29

    IPC分类号: G01R33/02

    CPC分类号: G01R33/093

    摘要: Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack.

    摘要翻译: 各种实施例可以通常涉及具有第一条纹高度的磁阻堆叠和邻近磁阻堆叠定位的偏置磁体。 偏置磁体可以具有小于第一条纹高度的第二条纹高度。 第一和第二条纹高度可对应于磁阻堆叠中的最小信噪比。

    Patterned Magnetic Recording Media By Selective Anodic Removal Of An Element
    3.
    发明申请
    Patterned Magnetic Recording Media By Selective Anodic Removal Of An Element 有权
    图案磁记录介质通过选择性阳极去除元素

    公开(公告)号:US20100273026A1

    公开(公告)日:2010-10-28

    申请号:US12431705

    申请日:2009-04-28

    IPC分类号: G11B5/33 C25F3/02

    摘要: A patterned magnetic recording media and method thereof is provided. A recording layer comprises a continuous surface of more-noble elements and less-noble elements, such as CoXYZ, wherein X can be Pt, Pd, Ru, Rh, Ir, Os, or Au, wherein Y can be null or Cr, and wherein Z can be null, Cu, Ta, Ti, O, B, Ag, or TiO2. The recording layer is masked, shielding areas for recording domains and exposing areas between the recording domains. A voltage bias establishes the substrate as an anode in the presence of Pt cathode, in an electrolyte bath. Ions of the less-noble element are anodically removed predominantly from the exposed areas of the recording layer for a controlled time. The controlled time minimizes oxidation of the nobler element and reduces undercutting of the recording domains. The article produced can have separating areas with surfaces substantially formed of the more-noble element.

    摘要翻译: 提供了一种图案化的磁记录介质及其方法。 记录层包括更贵族元素和较低贵族元素如CoXYZ的连续表面,其中X可以是Pt,Pd,Ru,Rh,Ir,Os或Au,其中Y可以是无效或Cr,以及 其中Z可以为零,Cu,Ta,Ti,O,B,Ag或TiO2。 屏蔽记录层,用于记录域的屏蔽区域和在记录域之间的曝光区域。 在Pt阴极的存在下,在电解质浴中,电压偏压建立了作为阳极的衬底。 较低贵族元素的离子主要从记录层的曝光区域阳极移除一段时间。 受控时间最小化了贵族元素的氧化并减少了记录域的底切。 所制造的制品可以具有基本上由更贵族元素形成的表面的分离区域。

    Integrated Tool for Fabricating an Electronic Component
    4.
    发明申请
    Integrated Tool for Fabricating an Electronic Component 审中-公开
    用于制造电子元件的集成工具

    公开(公告)号:US20100108636A1

    公开(公告)日:2010-05-06

    申请号:US12493468

    申请日:2009-06-29

    摘要: A tool for use in fabricating an electronic component includes a plurality of processing modules and a transfer chamber in communication with each of the plurality of processing modules. The transfer chamber includes a component for transferring a structure to each of the plurality of processing modules. The plurality of processing modules and the transfer chamber are sealed from the surrounding environment and are under a vacuum. The plurality of processing modules includes a first module configured to perform a first process on the structure and a second module configured to perform a second process on the structure. The first process includes performing at least one shaping operation on the structure.

    摘要翻译: 用于制造电子部件的工具包括与多个处理模块中的每一个连通的多个处理模块和传送室。 传送室包括用于将结构传送到多个处理模块中的每一个的部件。 多个处理模块和传送室与周围环境密封并处于真空状态。 多个处理模块包括被配置为对该结构执行第一处理的第一模块和被配置为对该结构执行第二处理的第二模块。 第一过程包括在该结构上执行至少一个整形操作。

    Magnetic sensor with non-rectangular geometry
    5.
    发明授权
    Magnetic sensor with non-rectangular geometry 有权
    具有非矩形几何形状的磁性传感器

    公开(公告)号:US08582251B2

    公开(公告)日:2013-11-12

    申请号:US12727670

    申请日:2010-03-19

    IPC分类号: G11B5/39

    摘要: Various embodiments generally relate to a magnetic sensor, and more specifically to a magnetoresistive read head sensor. In one such exemplary embodiment, a magnetic sensor comprises a sensor stack and magnetic bias elements positioned adjacent opposite sides of the sensor stack. At least one of the bias elements has a non-rectangular shape, such as substantially trapezoidal or parallelogram shapes having non-perpendicular corners.

    摘要翻译: 各种实施例通常涉及磁传感器,更具体地涉及磁阻读头传感器。 在一个这样的示例性实施例中,磁传感器包括传感器堆叠和邻近传感器堆叠的相对侧定位的磁偏置元件。 至少一个偏置元件具有非矩形形状,例如具有非垂直角的大致梯形或平行四边形。

    Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers
    6.
    发明授权
    Magnetoresistive sensor with synthetic antiferromagnetic cap or seed layers 有权
    具有合成反铁磁帽或种子层的磁阻传感器

    公开(公告)号:US08238063B2

    公开(公告)日:2012-08-07

    申请号:US12498859

    申请日:2009-07-07

    IPC分类号: G11B5/39

    摘要: A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.

    摘要翻译: 包括第一和第二屏蔽的磁性传感器组件,以及在第一和第二屏蔽之间的传感器堆叠。 传感器堆叠包括邻近第一屏蔽的种子层,与第二屏蔽相邻的盖层和种子层与盖层之间的磁传感器,其中种子层和盖层中的至少一个具有合成的反铁磁结构 。

    Magnetoresistive reader with demagnetization flux guide
    7.
    发明授权
    Magnetoresistive reader with demagnetization flux guide 有权
    具有退磁磁通指南的磁阻阅读器

    公开(公告)号:US08238062B2

    公开(公告)日:2012-08-07

    申请号:US12491838

    申请日:2009-06-25

    IPC分类号: G11B5/39

    摘要: In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

    摘要翻译: 在一些实施例中,磁读取器包括从空气轴承表面(ABS)延伸的第一和第二屏蔽,磁阻堆叠位于第一和第二屏蔽之间,并且磁通引导件与磁阻堆叠分离,同时连接第一和第二屏蔽 盾牌 磁通引导件将磁阻堆叠的远端磁耦合到第一屏蔽层。

    NON RECTANGULAR READER FOR ULTRA HIGH DENSITY MAGNETIC RECORDING
    8.
    发明申请
    NON RECTANGULAR READER FOR ULTRA HIGH DENSITY MAGNETIC RECORDING 有权
    用于超高密度磁记录的非矩形读取器

    公开(公告)号:US20110051294A1

    公开(公告)日:2011-03-03

    申请号:US12727670

    申请日:2010-03-19

    IPC分类号: G11B5/127 G11B5/10

    摘要: A magnetic sensor or magnetoresistive read head comprises a sensor stack and magnetic bias elements positioned adjacent each side of the sensor stack. The sensor stack and bias elements have non-rectangular shapes, such as substantially trapezoidal or parallelogram shapes having non-perpendicular corners. In some embodiments, the sensor stack and bias elements have a shape that stabilizes a “C” state or “S” state magnetization pattern.

    摘要翻译: 磁传感器或磁阻读头包括传感器堆叠和邻近传感器堆叠的每一侧定位的磁偏置元件。 传感器堆叠和偏置元件具有非矩形形状,例如具有非垂直角的大致梯形或平行四边形。 在一些实施例中,传感器堆叠和偏置元件具有稳定“C”状态或“S”状态磁化模式的形状。

    METHOD AND SYSTEM OF ONE TACTILE SENSOR
    9.
    发明公开

    公开(公告)号:US20240353239A1

    公开(公告)日:2024-10-24

    申请号:US18305377

    申请日:2023-04-24

    IPC分类号: G01D5/14

    CPC分类号: G01D5/14

    摘要: Methods, systems, and programing of one tactile sensor are presented. In one example, magnetic sensors containing one or more layers are formed on a base substrate for sensing a magnetic field generated by one ferromagnet present in close proximity to the magnetic sensors. The ferromagnet is embedded in an elastomer matrix. When an external force is applied to the elastomer matrix, it deforms and displaces the ferromagnet. As a result, the magnetic field generated by the ferromagnet changes. This change is sensed by the magnetic sensors to in turn quantify the applied force.

    Double biasing for trilayer MR sensors
    10.
    发明授权
    Double biasing for trilayer MR sensors 有权
    用于三层MR传感器的双偏置

    公开(公告)号:US08582250B2

    公开(公告)日:2013-11-12

    申请号:US12631183

    申请日:2009-12-04

    IPC分类号: G11B5/33 G11B5/127

    摘要: A trilayer magnetoresistive sensor has at least first and second ferromagnetic layers separated by a nonmagnetic layer. A high coercivity permanent magnet bias element biases the first ferromagnetic layer in a first direction. A high moment permanent magnet bias element biases the second ferromagnetic layer in a second direction substantially orthogonal to the first direction.

    摘要翻译: 三层磁阻传感器至少具有由非磁性层分离的第一和第二铁磁层。 高矫顽力永磁体偏置元件沿第一方向偏置第一铁磁层。 高瞬间永磁偏置元件在与第一方向大致正交的第二方向上偏置第二铁磁层。