Invention Grant
US08582338B1 Ternary content addressable memory cell having single transistor pull-down stack
失效
具有单晶体管下拉堆栈的三元内容可寻址存储单元
- Patent Title: Ternary content addressable memory cell having single transistor pull-down stack
- Patent Title (中): 具有单晶体管下拉堆栈的三元内容可寻址存储单元
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Application No.: US13149878Application Date: 2011-05-31
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Publication No.: US08582338B1Publication Date: 2013-11-12
- Inventor: Dimitri Argyres
- Applicant: Dimitri Argyres
- Applicant Address: US CA Irvine
- Assignee: NetLogic Microsystems, Inc.
- Current Assignee: NetLogic Microsystems, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox PLLC
- Main IPC: G11C15/00
- IPC: G11C15/00
Abstract:
Ternary CAM cells are disclosed that include a compare circuit that includes a discharge path having a single pull-down transistor coupled between the match line and ground potential.
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