发明授权
US08586399B2 Detection device manufacturing method using impurity semiconductor layer in arrayed pixels
有权
在阵列像素中使用杂质半导体层的检测器件制造方法
- 专利标题: Detection device manufacturing method using impurity semiconductor layer in arrayed pixels
- 专利标题(中): 在阵列像素中使用杂质半导体层的检测器件制造方法
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申请号: US13477401申请日: 2012-05-22
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公开(公告)号: US08586399B2公开(公告)日: 2013-11-19
- 发明人: Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
- 申请人: Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Canon U.S.A., Inc IP Division
- 优先权: JP2011-122015 20110531; JP2012-089550 20120410
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.
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