发明授权
- 专利标题： Method for reducing contact resistance of CMOS image sensor
- 专利标题（中）： 降低CMOS图像传感器接触电阻的方法
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申请号： US13556869申请日： 2012-07-24
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公开(公告)号： US08586404B2公开(公告)日： 2013-11-19
- 发明人: Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
- 申请人： Kuan-Chieh Huang , Chih-Jen Wu , Chen-Ming Huang , Dun-Nian Yaung , An-Chun Tu
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.
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