Invention Grant
- Patent Title: Semiconductor apparatus, method of manufacturing the same, and method of manufacturing semiconductor package
- Patent Title (中): 半导体装置及其制造方法以及半导体封装的制造方法
-
Application No.: US13195128Application Date: 2011-08-01
-
Publication No.: US08586477B2Publication Date: 2013-11-19
- Inventor: Se-young Jeong , Ho-jin Lee , Ho-geon Song , Jae-hyun Phee
- Applicant: Se-young Jeong , Ho-jin Lee , Ho-geon Song , Jae-hyun Phee
- Applicant Address: KR Samsung-ro, Yeongton-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongton-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0074662 20100802
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/00 ; H01L23/04

Abstract:
A semiconductor apparatus having a through electrode, a semiconductor package, and a method of manufacturing the semiconductor package are provided. The method of includes preparing a substrate including a buried via, the buried via having a first surface at a first end, and the buried via extending from a first substrate surface of the substrate into the substrate; planarizing a second substrate surface of the substrate opposite the first substrate surface to form a through via by exposing a second via surface at a second end of the buried via opposite the first end; forming a conductive capping layer on the exposed second via surface of the through via; and recessing the second substrate surface so that at least a first portion of the through via extends beyond the second substrate surface.
Public/Granted literature
Information query
IPC分类: