Invention Grant
- Patent Title: Memristive switch device
- Patent Title (中): 忆阻开关装置
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Application No.: US12769557Application Date: 2010-04-28
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Publication No.: US08586959B2Publication Date: 2013-11-19
- Inventor: Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
- Applicant: Matthew D. Pickett , Jianhua Yang , Dmitri Strukov
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
Public/Granted literature
- US20110266515A1 MEMRISTIVE SWITCH DEVICE Public/Granted day:2011-11-03
Information query
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