Invention Grant
- Patent Title: Light emitting device and method of fabricating a light emitting device
- Patent Title (中): 发光装置及其制造方法
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Application No.: US13070486Application Date: 2011-03-24
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Publication No.: US08587017B2Publication Date: 2013-11-19
- Inventor: Wei-Hung Kuo , Yi-Keng Fu , Suh-Fang Lin , Rong Xuan
- Applicant: Wei-Hung Kuo , Yi-Keng Fu , Suh-Fang Lin , Rong Xuan
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00

Abstract:
A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.
Public/Granted literature
- US20110254044A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE Public/Granted day:2011-10-20
Information query
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