利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

33 条记录 (耗时 0.032 秒)

    Light emitting device and method of fabricating a light emitting device
    1.
    发明授权
    Light emitting device and method of fabricating a light emitting device 有权
    发光装置及其制造方法

    公开(公告)号：US08587017B2

    公开(公告)日：2013-11-19

    申请号：US13070486

    申请日：2011-03-24

    申请人： Wei-Hung Kuo ,  Yi-Keng Fu ,  Suh-Fang Lin ,  Rong Xuan

    发明人： Wei-Hung Kuo ,  Yi-Keng Fu ,  Suh-Fang Lin ,  Rong Xuan

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405 ,  H01L33/44

    摘要： A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.

    摘要翻译： 提供发光器件和制造发光器件的方法。 发光器件包括载体衬底，至少一个外延结构，高电阻环壁，第一电极和第二电极。 外延结构设置在载体基板上，并且包括依次堆叠的第一半导体层，有源层和第二半导体层。 第一半导体层相对离开载体衬底，并且第二半导体层相对靠近载体衬底。 高阻环圈围绕外延结构，高阻环的宽度大于5um。 第一电极设置在载体衬底和外延结构之间。 第二电极设置在远离载体衬底的外延结构的一侧。

    LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE
    2.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE 有权
    发光装置和制造发光装置的方法

    公开(公告)号：US20110254044A1

    公开(公告)日：2011-10-20

    申请号：US13070486

    申请日：2011-03-24

    申请人： Wei-Hung Kuo ,  Yi-Keng Fu ,  Suh-Fang Lin ,  Rong Xuan

    发明人： Wei-Hung Kuo ,  Yi-Keng Fu ,  Suh-Fang Lin ,  Rong Xuan

    IPC分类号： H01L33/36

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405 ,  H01L33/44

    摘要： A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.

    摘要翻译： 提供发光器件和制造发光器件的方法。 发光器件包括载体衬底，至少一个外延结构，高电阻环壁，第一电极和第二电极。 外延结构设置在载体基板上，并且包括依次堆叠的第一半导体层，有源层和第二半导体层。 第一半导体层相对离开载体衬底，并且第二半导体层相对靠近载体衬底。 高阻环圈围绕外延结构，高阻环壁的宽度大于5μm。 第一电极设置在载体衬底和外延结构之间。 第二电极设置在远离载体衬底的外延结构的一侧。

    Nitride semiconductor light emitting device with magnetic film
    4.
    发明授权
    Nitride semiconductor light emitting device with magnetic film 有权
    氮化物半导体发光器件带磁性膜

    公开(公告)号：US08536614B2

    公开(公告)日：2013-09-17

    申请号：US13339388

    申请日：2011-12-29

    申请人： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

    发明人： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40

    摘要： A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

    摘要翻译： 提供了包括n型氮化物半导体层，p型氮化物半导体层，发光半导体层，第一金属焊盘，第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。 发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。 第一金属焊盘电连接到n型氮化物半导体层。 第二金属焊盘电连接到p型氮化物半导体层。 第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。 与n型氮化物半导体层的（0001）面平行的第一磁性体层的分布面积大于或等于平行于（0001）面的第一金属焊盘的面积。

    Light emitting chip package module and light emitting chip package structure and manufacturing method thereof
    9.
    发明授权
    Light emitting chip package module and light emitting chip package structure and manufacturing method thereof 有权
    发光芯片封装模块及其发光芯片封装结构及其制造方法

    公开(公告)号：US08698166B2

    公开(公告)日：2014-04-15

    申请号：US12837513

    申请日：2010-07-16

    申请人： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

    发明人： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

    IPC分类号： H01L33/00

    CPC分类号： H01L33/48 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package structure includes a carrier, a light emitting chip, and a sealant. The light emitting chip is disposed on and electrically connected to the carrier. The sealant is disposed on the carrier and covers the light emitting chip. The magnetic device is disposed next to the light emitting chip package structure to apply a magnetic field to the light emitting chip.

    摘要翻译： 发光芯片封装模块包括衬底，发光芯片封装结构和磁性器件。 基板具有表面。 发光芯片封装结构设置在基板的表面上。 发光芯片封装结构包括载体，发光芯片和密封剂。 发光芯片设置在载体上并与其电连接。 密封剂设置在载体上并覆盖发光芯片。 磁性装置设置在发光芯片封装结构的旁边，以向发光芯片施加磁场。

    NITRIDE SEMICONDUCTOR TEMPLATE AND FABRICATING METHOD THEREOF
    10.
    发明申请
    NITRIDE SEMICONDUCTOR TEMPLATE AND FABRICATING METHOD THEREOF 有权
    氮化物半导体模板及其制造方法

    公开(公告)号：US20120146190A1

    公开(公告)日：2012-06-14

    申请号：US12963650

    申请日：2010-12-09

    申请人： Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

    发明人： Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/3081 ,  H01L29/045 ,  H01L29/2003

    摘要： A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.

    摘要翻译： 提供了包括基板，掩模层，第一氮化物半导体层和第二氮化物半导体的氮化物半导体模板。 衬底具有多个沟槽，每个沟槽具有底表面，第一倾斜侧壁和第二倾斜侧壁。 掩模层覆盖第二倾斜侧壁并暴露第一倾斜侧壁。 第一氮化物半导体层设置在衬底和掩模层之上。 第一氮化物半导体层填充沟槽并与第一倾斜侧壁接触。 第一氮化物半导体层具有位于沟槽外部的空隙，并且掩模层的部分被空隙暴露。 第一氮化物半导体层具有多个纳米棒。 第二氮化物半导体层覆盖纳米棒。 纳米棒之间的空间并不完全由第二氮化物半导体层填充。