发明授权
- 专利标题: Non-volatile memory and fabricating method thereof
- 专利标题(中): 非易失性存储器及其制造方法
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申请号: US12333315申请日: 2008-12-12
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公开(公告)号: US08587036B2公开(公告)日: 2013-11-19
- 发明人: Shih-Chen Wang , Wen-Hao Ching
- 申请人: Shih-Chen Wang , Wen-Hao Ching
- 申请人地址: TW Hsinchu
- 专利权人: eMemory Technology Inc.
- 当前专利权人: eMemory Technology Inc.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
A non-volatile memory is formed on a substrate. The non-volatile memory includes an isolation structure, a floating gate, and a gate dielectric layer. The isolation structure is disposed in the substrate to define an active area. The floating gate is disposed on the substrate and crosses over the active area. The gate dielectric layer is disposed between the floating gate and the substrate. The floating gate includes a first region and a second region. An energy band of the second region is lower than an energy band of the first region, so that charges stored in the floating gate are away from an overlap region of the floating gate and the gate dielectric layer.
公开/授权文献
- US20100148238A1 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF 公开/授权日:2010-06-17