发明授权
US08587067B2 Graphene devices and silicon field effect transistors in 3D hybrid integrated circuits
有权
三维混合集成电路中的石墨烯器件和硅场效应晶体管
- 专利标题： Graphene devices and silicon field effect transistors in 3D hybrid integrated circuits
- 专利标题（中）： 三维混合集成电路中的石墨烯器件和硅场效应晶体管
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申请号： US13559941申请日： 2012-07-27
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公开(公告)号： US08587067B2公开(公告)日： 2013-11-19
- 发明人: Josephine B. Chang , Wilfried E. Haensch , Fei Liu , Zihong Liu
- 申请人： Josephine B. Chang , Wilfried E. Haensch , Fei Liu , Zihong Liu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A three dimensional integrated circuit includes a silicon substrate, a first source region disposed on the substrate, a first drain region disposed on the substrate, a first gate stack portion disposed on the substrate, a first dielectric layer disposed on the first source region, the first drain region, the first gate stack portion, and the substrate, a second dielectric layer formed on the first dielectric layer, a second source region disposed on the second dielectric layer, a second drain region disposed on the second dielectric layer, and a second gate stack portion disposed on the second dielectric layer, the second gate stack portion including a graphene layer.
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