Invention Grant
US08587079B2 Memory array including magnetic random access memory cells and oblique field lines
有权
存储阵列包括磁性随机存取存储单元和斜场线
- Patent Title: Memory array including magnetic random access memory cells and oblique field lines
- Patent Title (中): 存储阵列包括磁性随机存取存储单元和斜场线
-
Application No.: US13572566Application Date: 2012-08-10
-
Publication No.: US08587079B2Publication Date: 2013-11-19
- Inventor: Bertrand F. Cambou , Douglas J. Lee , Anthony J. Tether , Barry Hoberman
- Applicant: Bertrand F. Cambou , Douglas J. Lee , Anthony J. Tether , Barry Hoberman
- Applicant Address: US CA Santa Clara
- Assignee: Crocus Technology Inc.
- Current Assignee: Crocus Technology Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Cooley LLP
- Main IPC: H01L27/22
- IPC: H01L27/22
Abstract:
A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.
Public/Granted literature
- US20130037898A1 Memory Array Including Magnetic Random Access Memory Cells and Oblique Field Lines Public/Granted day:2013-02-14
Information query
IPC分类:
