发明授权
- 专利标题: Semiconductor device including shielding layer and fabrication method thereof
- 专利标题(中): 包括屏蔽层的半导体器件及其制造方法
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申请号: US13172174申请日: 2011-06-29
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公开(公告)号: US08587096B2公开(公告)日: 2013-11-19
- 发明人: Yong-hoon Kim , Hee-seok Lee , Jin-Ha Jeong , Ji-hyun Lee
- 申请人: Yong-hoon Kim , Hee-seok Lee , Jin-Ha Jeong , Ji-hyun Lee
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2010-0097838 20101007
- 主分类号: H01L23/552
- IPC分类号: H01L23/552
摘要:
Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
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