Invention Grant
- Patent Title: Semiconductor device including shielding layer and fabrication method thereof
- Patent Title (中): 包括屏蔽层的半导体器件及其制造方法
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Application No.: US13172174Application Date: 2011-06-29
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Publication No.: US08587096B2Publication Date: 2013-11-19
- Inventor: Yong-hoon Kim , Hee-seok Lee , Jin-Ha Jeong , Ji-hyun Lee
- Applicant: Yong-hoon Kim , Hee-seok Lee , Jin-Ha Jeong , Ji-hyun Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0097838 20101007
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
Public/Granted literature
- US20120086109A1 Semiconductor Device Including Shielding Layer And Fabrication Method Thereof Public/Granted day:2012-04-12
Information query
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