Invention Grant
US08587113B2 Thermal plate with planar thermal zones for semiconductor processing
有权
具有用于半导体加工的平面热区的热板
- Patent Title: Thermal plate with planar thermal zones for semiconductor processing
- Patent Title (中): 具有用于半导体加工的平面热区的热板
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Application No.: US13912907Application Date: 2013-06-07
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Publication No.: US08587113B2Publication Date: 2013-11-19
- Inventor: Keith William Gaff , Keith Comendant , Anthony Ricci
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, includes multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated has an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
Public/Granted literature
- US20130269368A1 THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING Public/Granted day:2013-10-17
Information query
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