Invention Grant
- Patent Title: Fabricating method of electron-emitting device
- Patent Title (中): 电子发射器件的制造方法
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Application No.: US13118558Application Date: 2011-05-30
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Publication No.: US08591984B2Publication Date: 2013-11-26
- Inventor: Chih-Hao Tsai , Kuan-Jung Chen , Fu-Ming Pan , Mei Liu , Chi-Neng Mo
- Applicant: Chih-Hao Tsai , Kuan-Jung Chen , Fu-Ming Pan , Mei Liu , Chi-Neng Mo
- Applicant Address: TW Taoyuan
- Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW96125965A 20070717
- Main IPC: B05D5/12
- IPC: B05D5/12

Abstract:
A fabricating method of an electron-emitting device includes at least the following steps. A substrate having a first side and a second side is provided. The first side is opposite to the second side. A first electrode pattern layer is formed on the first side of the substrate. A conductive pattern layer is formed on the substrate and the first electrode pattern layer, and the conductive pattern layer partially covers the first electrode pattern layer. An electron-emitting region is formed in the conductive pattern layer. A second electrode pattern layer is formed on the second side of the substrate. The second electrode pattern layer partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.
Public/Granted literature
- US20110229630A1 FABRICATING METHOD OF ELECTRON-EMITTING DEVICE Public/Granted day:2011-09-22
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