Invention Grant
- Patent Title: Nanocrystal doped matrixes
- Patent Title (中): 纳米晶体掺杂基质
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Application No.: US13277361Application Date: 2011-10-20
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Publication No.: US08592037B2Publication Date: 2013-11-26
- Inventor: J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A Whiteford , Jonathan Ziebarth
- Applicant: J. Wallace Parce , Paul Bernatis , Robert Dubrow , William P Freeman , Joel Gamoras , Shihai Kan , Andreas Meisel , Baixin Qian , Jeffery A Whiteford , Jonathan Ziebarth
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Main IPC: B32B9/04
- IPC: B32B9/04

Abstract:
Compositions containing a nanostructure, preferably a nanocrystal, are provided. The nanostructures have ligands bound to the surface. Such ligands are preferably siloxane containing ligands having at least one —COON group, although ligands having various ═P═O groups are also contemplated. The nanostructures can be embedded into a polymer such as a silicone polymer.
Public/Granted literature
- US20120068118A1 NANOCRYSTAL DOPED MATRIXES Public/Granted day:2012-03-22
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