Invention Grant
- Patent Title: Etching method for use with thin-film photovoltaic panel
- Patent Title (中): 用于薄膜光伏面板的蚀刻方法
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Application No.: US13239854Application Date: 2011-09-22
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Publication No.: US08592248B2Publication Date: 2013-11-26
- Inventor: Lap-Tak Andrew Cheng , Meijun Lu
- Applicant: Lap-Tak Andrew Cheng , Meijun Lu
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional step to apply heat to the laminate; and a step to remove the etching paste. The method is further characterized by the chemical removal of at least two chemically distinctive layers of the laminate at the periphery where the etching paste is applied. The method may be used to produce a thin-film photovoltaic panel.
Public/Granted literature
- US20120122270A1 ETCHING METHOD FOR USE WITH THIN-FILM PHOTOVOLTAIC PANEL Public/Granted day:2012-05-17
Information query
IPC分类: