Invention Grant
- Patent Title: High temperature atomic layer deposition of dielectric oxides
- Patent Title (中): 介电氧化物的高温原子层沉积
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Application No.: US12710185Application Date: 2010-02-22
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Publication No.: US08592294B2Publication Date: 2013-11-26
- Inventor: Suvi Haukka , Hannu Huotari , Marko Tuominen
- Applicant: Suvi Haukka , Hannu Huotari , Marko Tuominen
- Applicant Address: NL
- Assignee: ASM International N.V.
- Current Assignee: ASM International N.V.
- Current Assignee Address: NL
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
Public/Granted literature
- US20110207283A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF DIELECTRIC OXIDES Public/Granted day:2011-08-25
Information query
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