发明授权
- 专利标题： Method for fabricating an aperture
- 专利标题（中）： 孔径的制造方法
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申请号： US13156319申请日： 2011-06-08
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公开(公告)号： US08592321B2公开(公告)日： 2013-11-26
- 发明人: Feng-Yi Chang , Yi-Po Lin , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chih-Wen Feng , Shui-Yen Lu , Ching-Pin Hsu
- 申请人： Feng-Yi Chang , Yi-Po Lin , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chih-Wen Feng , Shui-Yen Lu , Ching-Pin Hsu
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/46
- IPC分类号： H01L21/46 ; H01L21/302
摘要：
A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask.
公开/授权文献
- US20120315748A1 METHOD FOR FABRICATING AN APERTURE 公开/授权日：2012-12-13
信息查询
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