Invention Grant
US08592784B2 Method for modifying a material layer using gas cluster ion beam processing
有权
使用气体簇离子束处理修饰材料层的方法
- Patent Title: Method for modifying a material layer using gas cluster ion beam processing
- Patent Title (中): 使用气体簇离子束处理修饰材料层的方法
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Application No.: US13181910Application Date: 2011-07-13
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Publication No.: US08592784B2Publication Date: 2013-11-26
- Inventor: John J. Hautala , Nathan E. Baxter
- Applicant: John J. Hautala , Nathan E. Baxter
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01J37/317
- IPC: H01J37/317
Abstract:
A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.
Public/Granted literature
- US20110266466A1 METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2011-11-03
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