Invention Grant
- Patent Title: Variable resistance memory device having reduced bottom contact area and method of forming the same
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Application No.: US13591891Application Date: 2012-08-22
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Publication No.: US08592797B2Publication Date: 2013-11-26
- Inventor: Hasan Nejad
- Applicant: Hasan Nejad
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom contact area. A variable resistance material is formed over the bottom electrodes such that the variable resistance material has a surface that is in electrical communication with the bottom electrode and a top electrode is formed over the variable resistance material. The small bottom electrode contact area reduces the reset current requirement which in turn reduces the write transistor size for each bit.
Public/Granted literature
- US20120319073A1 VARIABLE RESISTANCE MEMORY DEVICE HAVING REDUCED BOTTOM CONTACT AREA AND METHOD OF FORMING THE SAME Public/Granted day:2012-12-20
Information query
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