发明授权
- 专利标题： Semiconductor memory device and driving method thereof
- 专利标题（中）： 半导体存储器件及其驱动方法
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申请号： US13564864申请日： 2012-08-02
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公开(公告)号： US08593883B2公开(公告)日： 2013-11-26
- 发明人: Myoung-Jin Lee , Jin-Hong An
- 申请人： Myoung-Jin Lee , Jin-Hong An
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2008-0081989 20080821; KR10-2009-0077212 20090820
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.
公开/授权文献
- US20120294097A1 SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF 公开/授权日：2012-11-22
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