Invention Grant
- Patent Title: Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer
- Patent Title (中): 电阻加热蓝宝石单晶锭生长机，电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶圆制造方法
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Application No.: US13354323Application Date: 2012-01-19
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Publication No.: US08597756B2Publication Date: 2013-12-03
- Inventor: Do Won Song , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
- Applicant: Do Won Song , Young Hee Mun , Sang Hoon Lee , Seong Oh Jeong , Chang Youn Lee
- Applicant Address: KR Gyeongbuk
- Assignee: LG Siltron Inc.
- Current Assignee: LG Siltron Inc.
- Current Assignee Address: KR Gyeongbuk
- Agency: Lewis Roca Rothgerber LLP
- Priority: KR10-2011-0005339 20110119
- Main IPC: B32B3/02
- IPC: B32B3/02
Abstract:
Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
Public/Granted literature
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