公开(公告)号：US08597756B2

公开(公告)日：2013-12-03

申请号：US13354323

申请日：2012-01-19

申请人： Do Won Song ,  Young Hee Mun ,  Sang Hoon Lee ,  Seong Oh Jeong ,  Chang Youn Lee

发明人： Do Won Song ,  Young Hee Mun ,  Sang Hoon Lee ,  Seong Oh Jeong ,  Chang Youn Lee

IPC分类号： B32B3/02

CPC分类号： C30B29/20 ,  C30B15/14 ,  C30B15/22 ,  C30B15/30

摘要： Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.

摘要翻译： 提供了电阻加热的蓝宝石单晶锭种植者，制造电阻加热蓝宝石单晶锭，蓝宝石单晶锭和蓝宝石晶片的方法。 电阻加热的蓝宝石单晶锭种植机包括根据一个实施方案，包括室，包含在室中的坩埚并且包含氧化铝熔体，以及包括在室内并加热坩埚的电阻加热加热器。