发明授权
- 专利标题: Active device array substrate
- 专利标题(中): 有源器件阵列衬底
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申请号: US13353328申请日: 2012-01-19
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公开(公告)号: US08597968B2公开(公告)日: 2013-12-03
- 发明人: Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
- 申请人: Yu-Cheng Chen , Chen-Yueh Li , Ching-Sang Chuang , Ching-Chieh Shih , An-Thung Cho
- 申请人地址: TW Hsinchu
- 专利权人: Au Optronics Corporation
- 当前专利权人: Au Optronics Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 优先权: TW98112811A 20090417
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.
公开/授权文献
- US20120112214A1 ACTIVE DEVICE ARRAY SUBSTRATE 公开/授权日:2012-05-10