Invention Grant
- Patent Title: Semiconductor device having contact layer providing electrical connections
- Patent Title (中): 具有提供电连接的接触层的半导体器件
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Application No.: US13351101Application Date: 2012-01-16
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Publication No.: US08598633B2Publication Date: 2013-12-03
- Inventor: Marc Tarabbia , James B. Gullette , Mahbub Rashed , David S. Doman , Irene Y. Lin , Ingolf Lorenz , Larry Ho , Chinh Nguyen , Jeff Kim , Jongwook Kye , Yuansheng Ma , Yunfei Deng , Rod Augur , Seung-Hyun Rhee , Jason E. Stephens , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant: Marc Tarabbia , James B. Gullette , Mahbub Rashed , David S. Doman , Irene Y. Lin , Ingolf Lorenz , Larry Ho , Chinh Nguyen , Jeff Kim , Jongwook Kye , Yuansheng Ma , Yunfei Deng , Rod Augur , Seung-Hyun Rhee , Jason E. Stephens , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor.
Public/Granted literature
- US20130181289A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-07-18
Information query
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