发明授权
- 专利标题： Semiconductor device having contact layer providing electrical connections
- 专利标题（中）： 具有提供电连接的接触层的半导体器件
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申请号： US13351101申请日： 2012-01-16
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公开(公告)号： US08598633B2公开(公告)日： 2013-12-03
- 发明人: Marc Tarabbia , James B. Gullette , Mahbub Rashed , David S. Doman , Irene Y. Lin , Ingolf Lorenz , Larry Ho , Chinh Nguyen , Jeff Kim , Jongwook Kye , Yuansheng Ma , Yunfei Deng , Rod Augur , Seung-Hyun Rhee , Jason E. Stephens , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- 申请人： Marc Tarabbia , James B. Gullette , Mahbub Rashed , David S. Doman , Irene Y. Lin , Ingolf Lorenz , Larry Ho , Chinh Nguyen , Jeff Kim , Jongwook Kye , Yuansheng Ma , Yunfei Deng , Rod Augur , Seung-Hyun Rhee , Jason E. Stephens , Scott Johnson , Subramani Kengeri , Suresh Venkatesan
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES, Inc.
- 当前专利权人： GLOBALFOUNDRIES, Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor.
公开/授权文献
- US20130181289A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-07-18
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