发明授权
- 专利标题： Three-dimensional semiconductor memory devices
- 专利标题（中）： 三维半导体存储器件
-
申请号： US13291519申请日： 2011-11-08
-
公开(公告)号： US08598647B2公开(公告)日： 2013-12-03
- 发明人: Dongwoo Kim , Toshiro Nakanishi , SeungHyun Lim , Bio Kim , Kihyun Hwang , Jaeyoung Ahn
- 申请人： Dongwoo Kim , Toshiro Nakanishi , SeungHyun Lim , Bio Kim , Kihyun Hwang , Jaeyoung Ahn
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR10-2010-0110533 20101108
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
公开/授权文献
- US20120112260A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES 公开/授权日：2012-05-10
信息查询
IPC分类:
