发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12792378申请日： 2010-06-02
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公开(公告)号： US08598649B2公开(公告)日： 2013-12-03
- 发明人: Takayuki Okamura , Noboru Ooike , Wataru Sakamoto , Takashi Izumida
- 申请人： Takayuki Okamura , Noboru Ooike , Wataru Sakamoto , Takashi Izumida
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-148546 20090623; JP2009-221337 20090925
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/3205 ; H01L21/4763
摘要：
A nonvolatile semiconductor memory device according to embodiment includes: a semiconductor substrate having an upper portion being partitioned into a plurality of semiconductor portions extending in a first direction; a charge storage film provided on the semiconductor portion; a word-line electrode provided on the semiconductor substrate and extending in a second direction intersecting with the first direction; and a pair of selection gate electrodes provided on both sides of the word-line electrode in the first direction on the semiconductor substrate and extending in the second direction, a shortest distance between a corner portion of each of the semiconductor portions and each of the selection gate electrodes being longer than a shortest distance between the corner portion of the semiconductor portion and the word-line electrode in a cross section parallel to the second direction.
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