Invention Grant
- Patent Title: System and method for manipulating an ion beam
- Patent Title (中): 用于操纵离子束的系统和方法
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Application No.: US12944537Application Date: 2010-11-11
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Publication No.: US08604443B2Publication Date: 2013-12-10
- Inventor: Frank Sinclair , Victor M. Benveniste , Svetlana Radovanov , James S. Buff
- Applicant: Frank Sinclair , Victor M. Benveniste , Svetlana Radovanov , James S. Buff
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J1/50
- IPC: H01J1/50

Abstract:
A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.
Public/Granted literature
- US20110114849A1 SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM Public/Granted day:2011-05-19
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