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    SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM
    2.
    发明申请
    SYSTEM AND METHOD FOR MANIPULATING AN ION BEAM 有权
    用于操纵离子束的系统和方法

    公开(公告)号：US20110114849A1

    公开(公告)日：2011-05-19

    申请号：US12944537

    申请日：2010-11-11

    Applicant: Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    Inventor： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    IPC: H01J1/50

    CPC classification number: H01J37/3171 ,  H01J37/153 ,  H01J2237/1532

    Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.

    Abstract translation: 用于操纵具有主轴的离子束的系统包括具有通常设置在上部构件的不同区域中的第一和第二线圈的上部构件，并且被配置为分别彼此独立地导通第一和第二电流。 下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为分别彼此导通第三和第四电流。 在上部和下部构件之间限定透镜间隙，并且构造成透射离子束，其中第一至第四电流产生45度的四极场，其在离子束的主轴上施加旋转力。

    System and method for manipulating an ion beam
    7.
    发明授权
    System and method for manipulating an ion beam 有权
    用于操纵离子束的系统和方法

    公开(公告)号：US08604443B2

    公开(公告)日：2013-12-10

    申请号：US12944537

    申请日：2010-11-11

    Applicant: Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    Inventor： Frank Sinclair ,  Victor M. Benveniste ,  Svetlana Radovanov ,  James S. Buff

    IPC: H01J1/50

    CPC classification number: H01J37/3171 ,  H01J37/153 ,  H01J2237/1532

    Abstract: A system for manipulating an ion beam having a principal axis includes an upper member having a first and a second coil generally disposed in different regions of the upper member and configured to conduct, independently of each other, a first and a second current, respectively. A lower member includes a third and a fourth coil that are generally disposed opposite to respective first and second coils and are configured to conduct, independently of each other, a third and a fourth current, respectively. A lens gap is defined between the upper and lower members, and configured to transmit the ion beam, wherein the first through fourth currents produce a 45 degree quadrupole field that exerts a rotational force on the ion beam about its principal axis.

    Abstract translation: 用于操纵具有主轴的离子束的系统包括具有通常设置在上部构件的不同区域中的第一和第二线圈的上部构件，并且被配置为分别彼此独立地导通第一和第二电流。 下部构件包括通常与相应的第一和第二线圈相对设置的第三和第四线圈，并且被配置为分别彼此导通第三和第四电流。 在上部和下部构件之间限定透镜间隙，并且构造成透射离子束，其中第一至第四电流产生45度的四极场，其在离子束的主轴上施加旋转力。

    Technique for Reducing Magnetic Fields at an Implant Location
    10.
    发明申请
    Technique for Reducing Magnetic Fields at an Implant Location 有权
    在植入位置减少磁场的技术

    公开(公告)号：US20080169426A1

    公开(公告)日：2008-07-17

    申请号：US11622619

    申请日：2007-01-12

    Applicant: Kenneth H. Purser ,  James S. Buff ,  Victor Benveniste

    Inventor： Kenneth H. Purser ,  James S. Buff ,  Victor Benveniste

    IPC: G21K1/093

    CPC classification number: H01J37/141 ,  H01J37/153 ,  H01J37/3171 ,  H01J2237/1501 ,  H01J2237/1526 ,  H01J2237/24528

    Abstract: A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.

    Abstract translation: 公开了一种用于在植入位置减小磁场的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于减少植入位置处的磁场的装置和方法。 该装置和方法可以包括校正棒组件，其包括一组磁芯构件，沿着该组磁芯构件分布的多个线圈，以及连接元件，以使该组磁芯构件的端部彼此连接以形成 一个矩形校正器配置。 校正棒组件可以定位在磁偏转器的出口区域处，以改善具有从磁偏转器离开的多个子束的带状束的均匀性，并且矩形校正器配置可以提供期望的磁场夹紧动作。

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