发明授权
- 专利标题： Two-terminal resistance switching device and semiconductor device
- 专利标题（中）： 两端电阻开关器件和半导体器件
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申请号： US12671145申请日： 2008-07-23
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公开(公告)号： US08604458B2公开(公告)日： 2013-12-10
- 发明人: Hiroshi Suga , Yasuhisa Naitou , Masayo Horikawa , Tetsuo Shimizu
- 申请人： Hiroshi Suga , Yasuhisa Naitou , Masayo Horikawa , Tetsuo Shimizu
- 申请人地址： JP Tokyo
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP Tokyo
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2007-207397 20070809
- 国际申请： PCT/JP2008/063176 WO 20080723
- 国际公布： WO2009/019980 WO 20090212
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
The present invention is contemplated for providing a resistance switching device having a very small device size of approximately 20 nm×20 nm in its entirety, by taking advantage of a small diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se, via a simpler manner that does not require any molecule inclusion step, with an excellent electric conductivity. Provided is a two-terminal resistance switching device, which has multilayered carbon nanofibers or multilayered carbon nanotubes disposed with a nano-scale gap width therebetween.
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