公开(公告)号：US09135990B2

公开(公告)日：2015-09-15

申请号：US13819217

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C17/16

CPC分类号： G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79

摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

摘要翻译： 存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。 从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲 通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。 当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

公开(公告)号：US08604458B2

公开(公告)日：2013-12-10

申请号：US12671145

申请日：2008-07-23

申请人： Hiroshi Suga ,  Yasuhisa Naitou ,  Masayo Horikawa ,  Tetsuo Shimizu

发明人： Hiroshi Suga ,  Yasuhisa Naitou ,  Masayo Horikawa ,  Tetsuo Shimizu

IPC分类号： H01L29/06

CPC分类号： H01L29/125 ,  B82Y10/00 ,  B82Y30/00 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1253 ,  H01L51/0048 ,  H01L51/0591

摘要： The present invention is contemplated for providing a resistance switching device having a very small device size of approximately 20 nm×20 nm in its entirety, by taking advantage of a small diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se, via a simpler manner that does not require any molecule inclusion step, with an excellent electric conductivity. Provided is a two-terminal resistance switching device, which has multilayered carbon nanofibers or multilayered carbon nanotubes disposed with a nano-scale gap width therebetween.

摘要翻译： 本发明考虑用于通过利用多层碳纳米管或多层碳纳米纤维本身的小直径，通过经由一个或多个多层碳纳米纤维本身的优点，提供具有大约20nm×20nm的非常小的器件尺寸的电阻开关器件 更简单的方式，其不需要任何分子包合步骤，具有优异的导电性。 提供一种双端子电阻切换装置，其具有多层碳纳米纤维或多层碳纳米管，纳米尺度间隙宽度设置在其间。

公开(公告)号：US20130170285A1

公开(公告)日：2013-07-04

申请号：US13819247

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C2213/79 ,  H01L27/101

摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

公开(公告)号：US5475074A

公开(公告)日：1995-12-12

申请号：US187475

申请日：1994-01-28

申请人： Shingo Matsuoka ,  Hideki Kazama ,  Tadashi Hara ,  Tomonori Matsunaga ,  Hiroshi Suga

发明人： Shingo Matsuoka ,  Hideki Kazama ,  Tadashi Hara ,  Tomonori Matsunaga ,  Hiroshi Suga

IPC分类号： C08F212/34 ,  G02B1/04 ,  C08F236/20

CPC分类号： G02B1/04 ,  C08F212/34

摘要： A polymerizable composition containing;(A) 100 parts by weight of a vinylbenzyl compound of the formula (I), ##STR1## wherein each of R.sup.1 and R.sup.2 is independently a halogen atom, each of h and i is independently 0, 1 or 2, each of X.sup.1, X.sup.2 and X.sup.3 is independently an oxygen atom or a sulfur atom, and each of j, k and m is 0 or 1, provided that when k is 0, j is 0, that when m is 0, each of j and k is 0, that when j is 0 and when each of k and m is 1, X.sup.1 and X.sup.2 cannot be sulfur atoms at the same time, and that when each of m, k and j is 1, X.sup.1, X.sup.2 and X.sup.3 cannot be sulfur atoms at the same time,and(B) 0.1 to 20 parts by weight of 2,4-diphenyl-4-methyl-1-pentene.The polymerizable composition can give a molded article which is free from coloring in heat treatment, has sufficient properties as an ophthalmic lens such as a high refractive index, a high Abbe's number and a low specific gravity, is excellent in transparency, light resistance, heat resistance and impact resistance, and is therefore suitable as an organic glass such as an ophthalmic lens and a lens for an optical device.

摘要翻译： 一种可聚合组合物， （A）100重量份式（I）的乙烯基苄基化合物，其中R 1和R 2各自独立地为卤素原子，h和i各自独立地为0,1或 如图2所示，X1，X2和X3各自独立地为氧原子或硫原子，j，k和m各自为0或1，条件是当k为0时，j为0，当m为0时， j和k为0时，当j为0时，当k和m各自为1时，X1和X2不能同时为硫原子，当m，k和j分别为1时，X1，X2 并且X3不能同时为硫原子，（B）为0.1〜20重量份的2,4-二苯基-4-甲基-1-戊烯。 可聚合组合物可以得到在热处理中不着色的模塑制品，作为高折射率，高阿贝数和低比重的眼用透镜具有足够的性能，透明性，耐光性，耐热性优异 电阻和抗冲击性，因此适合作为有机玻璃如眼用透镜和用于光学装置的透镜。

公开(公告)号：US20130155757A1

公开(公告)日：2013-06-20

申请号：US13819217

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C13/00

CPC分类号： G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79

摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

摘要翻译： 存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。 从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲 通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。 当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

公开(公告)号：US20100193757A1

公开(公告)日：2010-08-05

申请号：US12671145

申请日：2008-07-23

申请人： Hiroshi Suga ,  Yasuhisa Naitou ,  Masayo Horikawa ,  Tetsuo Shimizu

发明人： Hiroshi Suga ,  Yasuhisa Naitou ,  Masayo Horikawa ,  Tetsuo Shimizu

IPC分类号： H01L45/00

CPC分类号： H01L29/125 ,  B82Y10/00 ,  B82Y30/00 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1253 ,  H01L51/0048 ,  H01L51/0591

摘要： The present invention is contemplated for providing a resistance switching device having a very small device size of approximately 20 nm×20 nm in its entirety, by taking advantage of a small diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se, via a simpler manner that does not require any molecule inclusion step, with an excellent electric conductivity.Provided is a two-terminal resistance switching device, which has multilayered carbon nanofibers or multilayered carbon nanotubes disposed with a nano-scale gap width therebetween.

摘要翻译： 本发明考虑用于通过利用多层碳纳米管或多层碳纳米纤维本身的小直径，通过经由一个或多个多层碳纳米纤维本身的优点，提供具有大约20nm×20nm的非常小的器件尺寸的电阻开关器件 更简单的方式，其不需要任何分子包合步骤，具有优异的导电性。 提供一种双端子电阻切换装置，其具有多层碳纳米纤维或多层碳纳米管，纳米尺度间隙宽度设置在其间。

公开(公告)号：US5789935A

公开(公告)日：1998-08-04

申请号：US509467

申请日：1995-07-31

申请人： Hiroshi Suga ,  Yasutomo Kawabata

发明人： Hiroshi Suga ,  Yasutomo Kawabata

IPC分类号： B60L3/12 ,  G01R31/34 ,  H02P29/00 ,  G01R17/02

CPC分类号： G01R31/343

摘要： A method of evaluating a motor. Prior to testing the motor, the following factors are measured as essential properties of the motor, e.g. a correlation between a reference current and a motor current, reaction of the motor current, etc. in response to a variation of the reference current, a correlation between the reference current and a motor torque, temperature characteristics of the motor torque, a relationship between the torque, the number of rotations, efficiency of the motor, and so on. The measured essential properties include response delays of an evaluator and sensors, and influences of disturbances such as temperature. Data collected during testing are corrected on the basis of the measured essential properties using the reference currents as time criteria such that influences caused by response delays can be excluded. Thus, the performances of the motor can be precisely analyzed.

摘要翻译： 一种评估电机的方法。 在测试电动机之前，以下因素被测量为电动机的基本特性，例如， 参考电流与电动机电流之间的相关性，电动机电流的反应等，响应于参考电流的变化，参考电流和电动机转矩之间的相关性，电动机转矩的温度特性， 扭矩，转数，电机效率等。 测量的基本属性包括评估者和传感器的响应延迟以及干扰（如温度）的影响。 在测试期间收集的数据基于测量的基本特性，使用参考电流作为时间标准进行校正，从而可以排除由响应延迟引起的影响。 因此，可以精确地分析电动机的性能。

公开(公告)号：US09190145B2

公开(公告)日：2015-11-17

申请号：US13819247

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  H01L27/10

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C2213/79 ,  H01L27/101

摘要： In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.

摘要翻译： 在包括绝缘基板的存储元件的驱动方法中，设置在所述绝缘基板上的第一电极和第二电极以及设置在所述第一电极和所述第二电极之间并且具有所述第一电极和所述第二电极的间隙的电极间间隙 其中发生第一和第二电极之间的电阻值变化的现象，并且可以执行从预定的低电阻状态到预定的高电阻状态的转变以及从高电阻状态到 低电阻状态时，在从高电阻状态向低电阻状态转变时，通过恒流电路将电流脉冲施加到存储元件。

公开(公告)号：US6127210A

公开(公告)日：2000-10-03

申请号：US724834

申请日：1996-10-03

申请人： Akio Mimura ,  Hiroshi Suga ,  Masaichi Nagai ,  Youmei Shinagawa ,  Isao Ikuta

发明人： Akio Mimura ,  Hiroshi Suga ,  Masaichi Nagai ,  Youmei Shinagawa ,  Isao Ikuta

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L27/1214

摘要： A simple and convenient method of manufacturing a CMOS TFT semiconductor circuit device wherein a doping layer doped into a first conductivity type without a mask is compensated with a dopant of a second conductivity type having a high density so that the conductivity type of the doping layer of first conductivity type is inverted into the second conductivity type, and further, in order to carry out the inversion of the conductivity type by the compensation easily and reliably, the surface density of the dopant of the doping layer of first conductivity type is reduced prior to compensating with the dopant of second conductivity type.

摘要翻译： 一种制造CMOS TFT半导体电路器件的简单和方便的方法，其中掺杂有第一导电类型而不具有掩模的掺杂层由具有高密度的第二导电类型的掺杂剂补偿，使得掺杂层的导电类型 第一导电类型被反转成第二导电类型，并且为了通过补偿容易且可靠地执行导电类型的反转，第一导电类型的掺杂层的掺杂剂的表面密度在 用第二导电类型的掺杂剂进行补偿。

公开(公告)号：US5623104A

公开(公告)日：1997-04-22

申请号：US593971

申请日：1996-01-30

申请人： Hiroshi Suga

发明人： Hiroshi Suga

IPC分类号： B60L3/00 ,  G01R31/34 ,  G01L3/00

CPC分类号： G01R31/343

摘要： A test motor 2 is controlled by a controller 7 in accordance with travelling pattern (i.e. vehicle speed) data of an electric vehicle. A load motor 3 is controlled by a controller 9 in accordance with a load pattern. A host controller 10 generates the load pattern based on the vehicle speed pattern and factors of the electric vehicle, and synchronously outputs the vehicle speed pattern and the load pattern to the controller 7 and 9, respectively. Data detected by a torque sensor 4 or other measuring element are input to the host controller 10 to generate a two-dimensional map showing the relationship between the motor efficiency and motor output, or between the motor efficiency and revolution speed. Since the load pattern is generated and input in advance without using feedback control, test results can be obtained with high accuracy.

摘要翻译： 测试电机2由控制器7根据电动车辆的行驶模式（即车速）数据来控制。 负载电动机3由控制器9根据负载模式进行控制。 主机控制器10基于车辆速度模式和电动车辆的因素产生负载模式，并且将车速模式和负载模式分别同时输出到控制器7和9。 由转矩传感器4或其他测量元件检测到的数据被输入到主机控制器10，以生成表示电动机效率和电动机输出之间或电动机效率与转速之间的关系的二维图。 由于在不使用反馈控制的情况下预先生成并输入负载模式，因此可以高精度地获得测试结果。