发明授权
- 专利标题: Non-volatile memory device and method of manufacturing the same
- 专利标题(中): 非易失性存储器件及其制造方法
-
申请号: US12648386申请日: 2009-12-29
-
公开(公告)号: US08604535B2公开(公告)日: 2013-12-10
- 发明人: Tea-Kwang Yu , Jeong-Uk Han , Yong-Tae Kim
- 申请人: Tea-Kwang Yu , Jeong-Uk Han , Yong-Tae Kim
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd
- 当前专利权人: Samsung Electronics Co., Ltd
- 当前专利权人地址: KR Suwon-si
- 代理机构: Stanzione & Kim, LLP
- 优先权: KR10-2009-0000944 20090106
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/762
摘要:
A non-volatile memory device includes an active region in which a channel of a transistor is formed in a substrate, element isolation films defining the active region and formed on the substrate at both sides of the channel at a height lower than an upper surface of the active region, a first dielectric layer, a second dielectric layer, and a control gate electrode formed on the active region in this order, and a floating gate electrode formed between the first dielectric layer and the second dielectric layer so as to intersect the length direction of the channel and extend to the upper surfaces of the element isolation films at both sides of the channel, thereby surrounding the channel.