发明授权
- 专利标题： Microelectronic assembly with multi-layer support structure
- 专利标题（中）： 微电子组件具有多层支撑结构
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申请号： US11650356申请日： 2007-01-05
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公开(公告)号： US08604605B2公开(公告)日： 2013-12-10
- 发明人: Michael J. Nystrom , Giles Humpston
- 申请人： Michael J. Nystrom , Giles Humpston
- 申请人地址： US CA San Jose
- 专利权人： Invensas Corp.
- 当前专利权人： Invensas Corp.
- 当前专利权人地址： US CA San Jose
- 代理机构： Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号： H01L23/12
- IPC分类号： H01L23/12
摘要：
A method of forming a microelectronic assembly includes positioning a support structure adjacent to an active region of a device but not extending onto the active region. The support structure has planar sections. Each planar section has a substantially uniform composition. The composition of at least one of the planar sections differs from the composition of at least one of the other planar sections. A lid is positioned in contact with the support structure and extends over the active region. The support structure is bonded to the device and to the lid.
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