发明授权
- 专利标题: High-side switch circuit
- 专利标题(中): 高侧开关电路
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申请号: US13425606申请日: 2012-03-21
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公开(公告)号: US08604842B2公开(公告)日: 2013-12-10
- 发明人: Yuki Sato , Hiroyuki Tsurumi
- 申请人: Yuki Sato , Hiroyuki Tsurumi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-182974 20110824
- 主分类号: H03K3/00
- IPC分类号: H03K3/00 ; H03K5/153
摘要:
The high-side switch circuit includes a first output MOS transistor that is connected, at a first end thereof, to a power supply terminal. The high-side switch circuit includes a second output MOS transistor that is connected to a second end of the first output MOS transistor at a first end thereof and to a voltage output terminal at a second end thereof. The high-side switch circuit includes a current detecting circuit that detects a current flowing through the first output MOS transistor and outputs a detection signal. The high-side switch circuit includes a first gate driver that applies a first control voltage to a gate of the first output MOS transistor. The high-side switch circuit includes a second gate driver that applies a second control voltage to a gate of the second output MOS transistor.
公开/授权文献
- US20130049813A1 HIGH-SIDE SWITCH CIRCUIT 公开/授权日:2013-02-28
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