发明授权
- 专利标题: Exposure method and lithography system
- 专利标题(中): 曝光方法和光刻系统
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申请号: US11915504申请日: 2006-05-24
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公开(公告)号: US08605248B2公开(公告)日: 2013-12-10
- 发明人: Masaharu Kawakubo
- 申请人: Masaharu Kawakubo
- 申请人地址: JP Tokyo
- 专利权人: Nikon Corporation
- 当前专利权人: Nikon Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2005-152974 20050525
- 国际申请: PCT/JP2006/310314 WO 20060524
- 国际公布: WO2006/126569 WO 20061130
- 主分类号: G03B27/68
- IPC分类号: G03B27/68
摘要:
In the case where the previous process (X) and the previous process (Y) are different in step 310, only a distortion amount in an X-axis direction is extracted from image distortion data of the previous process (X) in Step 316 and only a distortion amount in a Y-axis direction is extracted from image distortion data of the previous process (Y) in Step 318, and then in Step 320, image distortion data is created by synthesizing the extracted distortion amounts, and the synthesized image distortion data is used for subsequent adjustment of projected images. With this operation, the distortion of projected images can be adjusted per axis and accordingly overlay exposure with high accuracy can be realized.
公开/授权文献
- US20080259297A1 Exposure Method and Lithography System 公开/授权日:2008-10-23
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