Invention Grant
US08609261B2 Titanium oxide particles, manufacturing method thereof, magnetic memory, and charge storage type memory
有权
氧化钛粒子,其制造方法,磁存储器和电荷存储型存储器
- Patent Title: Titanium oxide particles, manufacturing method thereof, magnetic memory, and charge storage type memory
- Patent Title (中): 氧化钛粒子,其制造方法,磁存储器和电荷存储型存储器
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Application No.: US13127175Application Date: 2009-11-26
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Publication No.: US08609261B2Publication Date: 2013-12-17
- Inventor: Shin-ichi Ohkoshi , Tomoyuki Matsuda , Yoshihide Tsunobuchi , Kazuhito Hashimoto , Hiroko Tokoro
- Applicant: Shin-ichi Ohkoshi , Tomoyuki Matsuda , Yoshihide Tsunobuchi , Kazuhito Hashimoto , Hiroko Tokoro
- Applicant Address: JP Tokyo
- Assignee: The University of Tokyo
- Current Assignee: The University of Tokyo
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-309378 20081204
- International Application: PCT/JP2009/069973 WO 20091126
- International Announcement: WO2010/064575 WO 20100610
- Main IPC: C01G23/04
- IPC: C01G23/04

Abstract:
There are provided titanium oxide particles capable of manifesting an unprecedented property, a manufacturing method thereof and a magnetic memory as well as a charge storage type memory employing the titanium oxide particles. Unlike-conventional bulk bodies phase-transited between nonmagnetic semiconductors and paramagnetic metals around about 460K, provided are titanium oxide particles 3 capable of manifesting an unprecedented property that Ti3O5 particles do not undergo phase transitions at room temperature and allow a paramagnetic metal property thereof to be consistently maintained in any temperature range.
Public/Granted literature
- US20110204278A1 TITANIUM OXIDE PARTICLES, MANUFACTURING METHOD THEREOF, MAGNETIC MEMORY, AND CHARGE STORAGE TYPE MEMORY Public/Granted day:2011-08-25
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