发明授权
- 专利标题： Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process
- 专利标题（中）： 通过氧化工艺增强沟道半导体合金和栅极电介质之间的界面特性
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申请号： US13549184申请日： 2012-07-13
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公开(公告)号： US08609482B2公开(公告)日： 2013-12-17
- 发明人: Stephan Kronholz , Carsten Reichel , Annekathrin Zeun , Martin Trentzsch
- 申请人： Stephan Kronholz , Carsten Reichel , Annekathrin Zeun , Martin Trentzsch
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102009047311 20091130
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336 ; H01L21/4763 ; H01L21/3205
摘要：
In sophisticated transistor elements, long-term threshold voltage shifts in transistors comprising a threshold adjusting semiconductor alloy may be reduced by reducing the roughness of an interface formed between the threshold adjusting semiconductor material and the gate dielectric material. To this end, a portion of the threshold adjusting semiconductor material may be oxidized and may be removed prior to forming the high-k dielectric material.
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