发明授权
US08609545B2 Method to improve mask critical dimension uniformity (CDU) 有权
改善掩模临界尺寸均匀性(CDU)的方法

Method to improve mask critical dimension uniformity (CDU)
摘要:
A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.
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