公开(公告)号：US08609545B2

公开(公告)日：2013-12-17

申请号：US12031501

申请日：2008-02-14

申请人： I-Hsiung Huang ,  Chi-Lin Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

发明人： I-Hsiung Huang ,  Chi-Lin Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F1/32 ,  G03F1/36 ,  G03F1/80 ,  H01J37/32422 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67236

摘要： A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

摘要翻译： 公开了一种用于制造衬底的方法和系统。 首先，提供多个处理室，多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。 从等离子体过滤板文库中选择并除去等离子体过滤板。 然后，将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。 随后，在衬底中进行蚀刻处理。