发明授权
- 专利标题： Method for fabricating multi-resistive state memory devices
- 专利标题（中）： 制造多电阻状态存储器件的方法
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申请号： US13301490申请日： 2011-11-21
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公开(公告)号： US08611130B2公开(公告)日： 2013-12-17
- 发明人: Darrell Rinerson , Christophe Chevallier , Steve Kuo-Ren Hsia , Wayne Kinney , Steven Longcor , John Sanchez, Jr. , Philip Swab , Edmond Ward
- 申请人： Darrell Rinerson , Christophe Chevallier , Steve Kuo-Ren Hsia , Wayne Kinney , Steven Longcor , John Sanchez, Jr. , Philip Swab , Edmond Ward
- 申请人地址： US CA Sunnyvale
- 专利权人： Unity Semiconductor Corporation
- 当前专利权人： Unity Semiconductor Corporation
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Stolowitz Ford Cowger LLP
- 主分类号： H01L21/64
- IPC分类号： H01L21/64 ; G11C11/21
摘要：
A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.
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