发明授权
- 专利标题: Method for manufacturing liquid discharge head substrate
- 专利标题(中): 液体排出头基板的制造方法
-
申请号: US12203612申请日: 2008-09-03
-
公开(公告)号: US08613862B2公开(公告)日: 2013-12-24
- 发明人: Kazuhiro Asai , Hirokazu Komuro , Satoshi Ibe , Takuya Hatsui , Shimpei Otaka , Hiroto Komiyama , Keisuke Kishimoto
- 申请人: Kazuhiro Asai , Hirokazu Komuro , Satoshi Ibe , Takuya Hatsui , Shimpei Otaka , Hiroto Komiyama , Keisuke Kishimoto
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2007-231335 20070906
- 主分类号: G01D15/00
- IPC分类号: G01D15/00 ; G11B5/127
摘要:
A manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.
公开/授权文献
- US20090065472A1 METHOD FOR MANUFACTURING LIQUID DISCHARGE HEAD SUBSTRATE 公开/授权日:2009-03-12