发明授权
- 专利标题： Method of forming silicon oxide containing films
- 专利标题（中）： 形成含氧化硅膜的方法
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申请号： US13547876申请日： 2012-07-12
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公开(公告)号： US08613976B2公开(公告)日： 2013-12-24
- 发明人: Christian Dussarrat , Ikuo Suzuki , Kazutaka Yanagita , Julien Gatineau , Eri Tsukada
- 申请人： Christian Dussarrat , Ikuo Suzuki , Kazutaka Yanagita , Julien Gatineau , Eri Tsukada
- 申请人地址： FR Paris
- 专利权人： L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- 当前专利权人： L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- 当前专利权人地址： FR Paris
- 代理商 Allen E. White; Patricia E. McQueeney
- 优先权： JP2005-077608 20050317
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/455
摘要：
A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
公开/授权文献
- US20120276292A1 METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 公开/授权日：2012-11-01
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