发明授权
- 专利标题： Semiconductor device including a metal wiring with a metal cap
- 专利标题（中）： 包括具有金属盖的金属布线的半导体装置
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申请号： US12726604申请日： 2010-03-18
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公开(公告)号： US08614510B2公开(公告)日： 2013-12-24
- 发明人: Hideyuki Tomizawa , Noriaki Matsunaga , Tadayoshi Watanabe , Shiro Mishima , Masako Kodera
- 申请人： Hideyuki Tomizawa , Noriaki Matsunaga , Tadayoshi Watanabe , Shiro Mishima , Masako Kodera
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-068960 20090319
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.
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