发明授权
- 专利标题: Capacitor and method for making same
- 专利标题(中): 电容器及其制作方法
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申请号: US13267424申请日: 2011-10-06
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公开(公告)号: US08617949B2公开(公告)日: 2013-12-31
- 发明人: Kuo-Chi Tu , Wen-Chuan Chiang , Chen-Jong Wang
- 申请人: Kuo-Chi Tu , Wen-Chuan Chiang , Chen-Jong Wang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A system-on-chip device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional number of capacitors in additional regions. The capacitors may be of different shapes and sizes. A region may comprise more than one capacitor. Each capacitor in a region has a top electrode, a bottom electrode, and a capacitor insulator. The top electrodes of all the capacitors are formed in a common process, while the bottom electrodes of all the capacitors are formed in a common process. The capacitor insulator may have different number of sub-layers, formed with different materials or thickness. The capacitors may be formed in an inter-layer dielectric layer or in an inter-metal dielectric layer. The regions may be a mixed signal region, an analog region, and so forth.
公开/授权文献
- US20120091559A1 Capacitor and Method for Making Same 公开/授权日:2012-04-19