Invention Grant
- Patent Title: Through hole via filling using electroless plating
- Patent Title (中): 通孔采用化学镀填充
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Application No.: US12982697Application Date: 2010-12-30
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Publication No.: US08617987B2Publication Date: 2013-12-31
- Inventor: Kah Wee Gan , Yonggang Jin , Yun Liu , Yaohuang Huang
- Applicant: Kah Wee Gan , Yonggang Jin , Yun Liu , Yaohuang Huang
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Pte Ltd.
- Current Assignee: STMicroelectronics Pte Ltd.
- Current Assignee Address: SG Singapore
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48
Abstract:
An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating.
Public/Granted literature
- US20120168942A1 THROUGH HOLE VIA FILLING USING ELECTROLESS PLATING Public/Granted day:2012-07-05
Information query
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