Invention Grant
- Patent Title: Method of forming metal silicide contact and metal interconnect
- Patent Title (中): 形成金属硅化物接触和金属互连的方法
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Application No.: US13427091Application Date: 2012-03-22
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Publication No.: US08617992B2Publication Date: 2013-12-31
- Inventor: Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
- Applicant: Aditi Chandra , Arvind Kamath , James Montague Cleeves , Joerg Rockenberger , Mao Takashima , Erik Scher
- Applicant Address: US CA San Jose
- Assignee: Kovio, Inc.
- Current Assignee: Kovio, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Murabito, Hao & Barnes LLP
- Agent Andrew D. Fortney
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
Public/Granted literature
- US20120181636A1 Printing of Contact Metal and Interconnect Metal Via Seed Printing and Plating Public/Granted day:2012-07-19
Information query
IPC分类: