发明授权
- 专利标题: Selective wet etching of hafnium aluminum oxide films
- 专利标题(中): 铪氧化铝薄膜的选择性湿蚀刻
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申请号: US13585072申请日: 2012-08-14
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公开(公告)号: US08618000B2公开(公告)日: 2013-12-31
- 发明人: Prashant Raghu , Yi Yang
- 申请人: Prashant Raghu , Yi Yang
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.
公开/授权文献
- US20120306059A1 SELECTIVE WET ETCHING OF HAFNIUM ALUMINUM OXIDE FILMS 公开/授权日:2012-12-06