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US08619460B2 Nonvolatile memory device and method for programming nonvolatile memory element 有权
非易失性存储器件和非易失性存储元件的编程方法

Nonvolatile memory device and method for programming nonvolatile memory element
摘要：
A nonvolatile memory device (800) includes a variable resistance nonvolatile memory element (100) and a control circuit (810). The control circuit (810) determines whether a resistance value of the nonvolatile memory element (100) in a high resistance state is equal to or greater than a predetermined threshold value. Moreover, if the resistance value of the nonvolatile memory element (100) in the high resistance state is smaller than the threshold value, the control circuit (810) applies a first voltage (VL1) to the nonvolatile memory element (100) to change a resistance state of the nonvolatile memory element (100) from the high resistance state to the low resistance state. Moreover, if the resistance value of the nonvolatile memory element (100) in the high resistance state is equal to or greater than the threshold value, the control circuit (810) applies to the nonvolatile memory element (100) a second voltage (VL2) an absolute value of which is smaller an absolute value of the first voltage (VL1) to change the resistance state of the nonvolatile memory element (100) from the high resistance state to the low resistance state.
摘要（中）：

非易失性存储器件（800）包括可变电阻非易失性存储元件（100）和控制电路（810）。 控制电路（810）确定高电阻状态下的非易失性存储元件（100）的电阻值是否等于或大于预定阈值。 此外，如果高电阻状态下的非易失性存储元件（100）的电阻值小于阈值，则控制电路（810）向非易失性存储元件（100）施加第一电压（VL1） 非易失性存储元件（100）从高电阻状态到低电阻状态的电阻状态。 此外，如果高电阻状态下的非易失性存储元件（100）的电阻值为阈值以上，则控制电路（810）向非易失性存储元件（100）施加第二电压（VL2） 其绝对值对于将非易失性存储元件（100）的电阻状态从高电阻状态改变为低电阻状态的第一电压（VL1）的绝对值较小。

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