发明授权
- 专利标题: Group III nitride semiconductor laser diode
- 专利标题(中): III族氮化物半导体激光二极管
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申请号: US12836065申请日: 2010-07-14
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公开(公告)号: US08619828B2公开(公告)日: 2013-12-31
- 发明人: Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
- 申请人: Katsushi Akita , Yohei Enya , Takashi Kyono , Masahiro Adachi , Shinji Tokuyama , Yusuke Yoshizumi , Takamichi Sumitomo , Masaki Ueno
- 申请人地址: JP Osaka-shi
- 专利权人: Sumitomo Electronic Industries, Ltd.
- 当前专利权人: Sumitomo Electronic Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi
- 代理机构: Venable LLP
- 代理商 Michael A. Sartori; Tamatane J. Aga
- 优先权: JPP2009-165889 20090714
- 主分类号: H01S5/343
- IPC分类号: H01S5/343
摘要:
A group III nitride substrate has a semi-polar primary surface. A first cladding layer has a first conductivity type, and comprises aluminum-containing group III nitride. The first cladding layer is provided on the substrate. An active layer is provided on the first cladding layer. A second cladding layer has a second conductivity type, and comprises aluminum-containing group III nitride. The second cladding layer is provided on the active layer. An optical guiding layer is provided between the first cladding layer and the active layer and/or between the second cladding layer and the active layer. The optical guiding layer comprises a first layer comprising Inx1Ga1-x1N (0≦x1
公开/授权文献
- US20110013656A1 GROUP III NITRIDE SEMICONDUCTOR LASER DIODE 公开/授权日:2011-01-20
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