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    Method of making semiconductor light-emitting device
    5.
    发明授权
    Method of making semiconductor light-emitting device 失效
    制造半导体发光器件的方法

    公开(公告)号：US08357558B2

    公开(公告)日：2013-01-22

    申请号：US12837248

    申请日：2010-07-15

    申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

    发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

    IPC分类号： H01L21/00

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0014 ,  H01S5/34333

    摘要： A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor.

    摘要翻译： 制造半导体发光器件的方法包括以下步骤：为衬底的主表面选择至少一个倾斜角以评估发光层中的压电极化的方向，所述衬底包括III族氮化物半导体; 制备具有主表面的基底，所述主表面具有所选择的倾斜角，并且所述主表面包含III族氮化物半导体; 以选定的倾斜角形成量子阱结构和用于发光层的p型和n型氮化镓半导体层以制备衬底产品; 测量衬底产物的光致发光，同时向衬底产物施加偏压，以确定光致发光的偏差依赖性; 以所确定的偏置依赖性，以所选择的倾斜角在所述基板的主表面上评估所述发光层中的所述压电极化的方向; 基于选择用于制造半导体发光器件的生长衬底的平面取向的评估，确定要使用衬底的主表面或背表面中的哪一个; 以及在所述生长衬底的主表面上形成用于所述半导体发光器件的半导体层压体。 倾斜角由衬底的主表面和III族氮化物半导体的（0001）面限定。 发光层的阱层和阻挡层中的每一个沿着从垂直于沿着III族氮化物半导体的c轴延伸的参考轴的平面倾斜的参考平面延伸。

    Ohmic contact on a p-type principal surface tilting with respect to the c-plane
    7.
    发明授权
    Ohmic contact on a p-type principal surface tilting with respect to the c-plane 有权
    在相对于c面倾斜的p型主表面上的欧姆接触

    公开(公告)号：US08227898B2

    公开(公告)日：2012-07-24

    申请号：US12836222

    申请日：2010-07-14

    申请人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

    发明人： Shinji Tokuyama ,  Masahiro Adachi ,  Takashi Kyono ,  Yoshihiro Saito

    IPC分类号： H01L29/20 ,  H01L29/04

    CPC分类号： H01L33/40 ,  H01L33/16 ,  H01L33/32

    摘要： A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surface 13a of a p-type semiconductor region 13 extends along a plane tilting from a c-axis (axis ) of hexagonal group-III nitride. A metal layer 15 is deposited on the principal surface 13a of the p-type semiconductor region 13. The metal layer 15 and the p-type semiconductor region 13 are separated by an interface 17 such that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surface 13a comprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interface 17 avoids an increase in amount of oxide after the formation of the metal layer 15 for the electrode.

    摘要翻译： 半导体器件在从c面倾斜的p型主表面上具有令人满意的欧姆接触。 p型半导体区域13的主表面13a沿着从六方晶III族氮化物的c轴（轴<0001>）倾斜的平面延伸。 金属层15沉积在p型半导体区域13的主表面13a上。金属层15和p型半导体区域13被界面17分离，使得金属层用作非合金电极 。 由于六方晶III族氮化物含有镓作为III族元素，所以与六方晶III族氮化物的c面相比，包含六方晶III族氮化物的主表面13a更易于氧化。 界面17避免了形成用于电极的金属层15之后的氧化物的量的增加。

    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE
    10.
    发明申请
    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
    III-INTRIDE SEMICONDUCTOR LASER DEVICE，以及​​制造III-NITRIDE SEMICONDUCTOR LASER DEVICE的方法

    公开(公告)号：US20110075695A1

    公开(公告)日：2011-03-31

    申请号：US12831557

    申请日：2010-07-07

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    IPC分类号： H01S5/323 ,  H01L33/00 ,  H01S5/30

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/14

    摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film.

    摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 第一覆层，第二覆层，有源层配置在与半极性主面垂直的轴上。 指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜，或者在不小于 相对于表示法线轴方向的法线矢量，朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。 第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。 第一电介质多层膜的厚度小于第二电介质多层膜的厚度。